发明申请
- 专利标题: Semiconductor Device
- 专利标题(中): 半导体器件
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申请号: US12400380申请日: 2009-03-09
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公开(公告)号: US20090231021A1公开(公告)日: 2009-09-17
- 发明人: Jun Koyama , Yoshifumi Tanada , Hideaki Shishido
- 申请人: Jun Koyama , Yoshifumi Tanada , Hideaki Shishido
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 优先权: JP2008-065980 20080314
- 主分类号: G05F3/02
- IPC分类号: G05F3/02
摘要:
An element is protected without hampering an actual operation in the case where overvoltage that might damage the element is applied. A semiconductor device includes a first potential supply terminal 100; a second potential supply terminal 101; a protection circuit 107 which includes a voltage divider 102 electrically connected to the first potential supply terminal 100 and the second potential supply terminal 101, a control circuit 103, and a bypass circuit 106; and a functional circuit 108 which is electrically connected to the first potential supply terminal 100 and the second potential supply terminal 101 through the protection circuit 107.
公开/授权文献
- US08054596B2 Semiconductor device 公开/授权日:2011-11-08
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