A method of manufacturing an active matrix substrate is presented. The method includes forming a transistor having a gate line, a semiconductor layer, an insulating layer between the gate line and the semiconductor layer, a source electrode, and a drain electrode; forming a pixel electrode comprising a first sub-pixel electrode and a second sub-pixel electrode; forming an auxiliary coupling electrode connected to the second sub-pixel electrode through a first contact hole; and forming the first sub-pixel electrode through a second contact hole connected to the drain electrode of the transistor. The auxiliary coupling electrode and the first sub-pixel electrode overlap each other such that the second sub-pixel electrode is capacitively coupled to the first sub-pixel electrode and the auxiliary coupling electrode and the electrode part form a capacitor.