发明申请
- 专利标题： SEMICONDUCTOR DEVICE HAVING A GATE INSULATING FILM STRUCTURE INCLUDING AN INSULATING FILM CONTAINING METAL, SILICON AND OXYGEN AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 具有门绝缘膜结构的半导体器件，包括含有金属，硅和氧的绝缘膜及其制造方法
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申请号： US12471830申请日： 2009-05-26
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公开(公告)号： US20090233451A1公开(公告)日： 2009-09-17
- 发明人: Yoshitaka Tsunashima , Seiji Ihumiya , Yasumasa Suizu , Yoshio Ozawa , Kiyotaka Miyano , Masayuki Tanaka
- 申请人： Yoshitaka Tsunashima , Seiji Ihumiya , Yasumasa Suizu , Yoshio Ozawa , Kiyotaka Miyano , Masayuki Tanaka
- 优先权： JP2000-066960 20000310
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.
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