发明申请
- 专利标题: MEMORY DEVICE REPAIR APPARATUS, SYSTEMS, AND METHODS
- 专利标题(中): 存储器件修复装置,系统和方法
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申请号: US12049036申请日: 2008-03-14
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公开(公告)号: US20090235145A1公开(公告)日: 2009-09-17
- 发明人: Yutaka Ito , Adrian J. Drexler
- 申请人: Yutaka Ito , Adrian J. Drexler
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 主分类号: G11C29/04
- IPC分类号: G11C29/04
摘要:
Apparatus, systems, and methods are disclosed, such as those that operate within a memory device to replace one or more selected failing memory cells with one or more repair memory cells and to correct data digits read from other failing memory cells in the memory device using a different method. Additional apparatus, systems, and methods are disclosed.
公开/授权文献
- US08255771B2 Memory device repair apparatus, systems, and methods 公开/授权日:2012-08-28
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