发明申请
- 专利标题： HYBRID ORIENTATION SUBSTRATE WITH STRESS LAYER
- 专利标题（中）： 具有应力层的混合方向衬底
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申请号： US12050956申请日： 2008-03-19
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公开(公告)号： US20090236663A1公开(公告)日： 2009-09-24
- 发明人: Lee Wee Teo , Chung Woh Lai , Johnny Widodo , Shyue Seng Tan , Shailendra Mishra , Zhao Lun , Yong Meng Lee , Jeffrey Chee
- 申请人： Lee Wee Teo , Chung Woh Lai , Johnny Widodo , Shyue Seng Tan , Shailendra Mishra , Zhao Lun , Yong Meng Lee , Jeffrey Chee
- 申请人地址： SG Singapore
- 专利权人： CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- 当前专利权人： CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- 当前专利权人地址： SG Singapore
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/76 ; H01L23/58
摘要：
A hybrid orientation substrate includes a base substrate having a first orientation, a first surface layer having a first orientation disposed on the base substrate in a first region, and a second surface layer disposed on the base substrate in a second region. The second surface layer has an upper sub-layer having a second orientation, and a lower sub-layer between the base substrate and the upper sub-layer. The lower sub-layer having a first stress induces a second stress on the upper sub-layer.
公开/授权文献
- US08274115B2 Hybrid orientation substrate with stress layer 公开/授权日：2012-09-25
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