发明申请
US20090238972A1 METHODS AND APPARATUS FOR USING REDUCED PURITY SILANE TO DEPOSIT SILICON
审中-公开
使用降低纯度的硅烷沉积硅的方法和装置
- 专利标题： METHODS AND APPARATUS FOR USING REDUCED PURITY SILANE TO DEPOSIT SILICON
- 专利标题（中）： 使用降低纯度的硅烷沉积硅的方法和装置
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申请号： US12410063申请日： 2009-03-24
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公开(公告)号： US20090238972A1公开(公告)日： 2009-09-24
- 发明人: Daniel O. Clark , Mehran Moalem , Robbert M. Vermeulen , Yong Kee Chae , Charles Gay , John M. White , Robert Z. Bachrach , Jay J. Jung
- 申请人： Daniel O. Clark , Mehran Moalem , Robbert M. Vermeulen , Yong Kee Chae , Charles Gay , John M. White , Robert Z. Bachrach , Jay J. Jung
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： C23C16/42
- IPC分类号： C23C16/42
摘要：
In one aspect, a method of forming a silicon layer on a substrate is provided, including the steps providing a substrate; and introducing hydrogen and silane into a chamber containing the substrate such that a layer of silicon is deposited on the substrate; wherein the silane is less than about 99.999% pure. Numerous other aspects are provided.