发明申请
US20090243044A1 Semiconductor wafer, semiconductor device, and method of manufacturing semiconductor device
有权
半导体晶片，半导体器件以及半导体器件的制造方法
- 专利标题： Semiconductor wafer, semiconductor device, and method of manufacturing semiconductor device
- 专利标题（中）： 半导体晶片，半导体器件以及半导体器件的制造方法
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申请号： US12382540申请日： 2009-03-18
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公开(公告)号： US20090243044A1公开(公告)日： 2009-10-01
- 发明人: Kouji Tanaka , Seiya Isozaki
- 申请人： Kouji Tanaka , Seiya Isozaki
- 申请人地址： JP Kawasaki
- 专利权人： NEC Electronics Corporation
- 当前专利权人： NEC Electronics Corporation
- 当前专利权人地址： JP Kawasaki
- 优先权： JP2008-085576 20080328
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/78
摘要：
Provided is a semiconductor wafer with a scribe line region and a plurality of element forming regions partitioned by the scribe line region, the semiconductor wafer including: conductive patterns formed in the scribe line region; and an island-shaped passivation film formed above at least a conductive pattern, which is or may be exposed to a side surface of a semiconductor chip obtained by dicing the semiconductor wafer along the scribe line region, among the conductive patterns, so that the island-shaped passivation film is opposed to the conductive pattern.