发明申请
US20090243109A1 METAL CAP LAYER OF INCREASED ELECTRODE POTENTIAL FOR COPPER-BASED METAL REGIONS IN SEMICONDUCTOR DEVICES
有权
在半导体器件中用于铜基金属区域的电极潜在金属层的金属层
- 专利标题： METAL CAP LAYER OF INCREASED ELECTRODE POTENTIAL FOR COPPER-BASED METAL REGIONS IN SEMICONDUCTOR DEVICES
- 专利标题（中）： 在半导体器件中用于铜基金属区域的电极潜在金属层的金属层
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申请号： US12355840申请日： 2009-01-19
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公开(公告)号： US20090243109A1公开(公告)日： 2009-10-01
- 发明人: Markus Nopper , Axel Preusse , Robert Seidel
- 申请人： Markus Nopper , Axel Preusse , Robert Seidel
- 优先权： DE102008016431.3 20080331
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; H01L21/768
摘要：
A conductive cap material for a copper region may be provided with enhanced etch resistivity by taking into consideration the standard electrode potential of one or more of the species contained therein. For example, instead of a conventionally used CoWP alloy, a modified alloy may be used, by substituting the cobalt species by a metallic species having a less negative standard electrode potential, such as nickel. Consequently, device performance may be enhanced, while at the same time the overall process complexity may be reduced.