发明申请
- 专利标题: OPTICAL CHARACTERIZATION OF PHOTONIC INTEGRATED CIRCUITS
- 专利标题(中): 光电集成电路的光学特性
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申请号: US12115201申请日: 2008-05-05
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公开(公告)号: US20090245322A1公开(公告)日: 2009-10-01
- 发明人: Janice A. Hudgings , Rajeev J. Ram , Maryam Farzaneh
- 申请人: Janice A. Hudgings , Rajeev J. Ram , Maryam Farzaneh
- 申请人地址: US MA CAMBRIDGE US MA SOUTH HADLEY
- 专利权人: MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT),MOUNT HOLYOKE COLLEGE
- 当前专利权人: MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT),MOUNT HOLYOKE COLLEGE
- 当前专利权人地址: US MA CAMBRIDGE US MA SOUTH HADLEY
- 主分类号: G01N25/00
- IPC分类号: G01N25/00
摘要:
In one aspect, the present invention provides techniques and apparatus for optical characterization of photonic devices and/or circuits. By way of example, the techniques can be used to identify damaged devices in photonic integrated circuits. In some embodiments, thermal imaging is employed as a diagnostic tool for characterizing the devices/circuits under investigation. For example, in one embodiment, integrated cascaded semiconductor amplifiers can be characterized using amplified spontaneous emission from one amplifier as a thermal modulation input to another amplifier. A thermoreflectance image of the second amplifier can reveal flaws, if present. Further, in some embodiments, thermal imaging in conjunction with a total energy model can be employed to characterize the elements of photonic circuits optically and/or to map the optical power distribution throughout the circuits.
公开/授权文献
- US08408786B2 Optical characterization of photonic integrated circuits 公开/授权日:2013-04-02
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