Embodiments of the present invention generally provide methods for depositing a silicon carbide (SiC) passivation layer that may act as a high-quality passivation layer for solar cells. Embodiments of the invention also provide methods for depositing a silicon carbide/silicon oxide passivation layer that acts as a high-quality rear surface passivation layer for solar cells. The methods described herein enable the use of deposition systems configured for processing large-area substrates for solar cell processing. According to embodiments of the invention, a SiC passivation layer may be formed with improved minority carrier lifetime measurements. The SiC passivation layer may be formed at a temperature between about 150° C. and 450° C., which is much lower than temperatures for thermal oxide passivation.