- 专利标题： Field-effect transistor structure and fabrication method thereof
-
申请号： US12080505申请日： 2008-04-02
-
公开(公告)号： US20090250731A1公开(公告)日： 2009-10-08
- 发明人: Tsung-Yeh Yang , Tri-Rung Yew
- 申请人： Tsung-Yeh Yang , Tri-Rung Yew
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L21/3205
摘要：
A field-effect transistor (FET) structure is provided. The FET structure includes a gate substrate, a dielectric layer, conductive electrodes, and a carbon nanotube (CNT). The gate substrate is made of a conductive material. The dielectric layer is disposed on the substrate. The conductive electrodes are disposed on the dielectric layer, and contain nickel and chromium. The CNT is disposed on the dielectric layer and electrically connects two conductive electrodes
信息查询
IPC分类:
