发明申请
- 专利标题： TRENCH GATE POWER MOSFET
- 专利标题（中）： TRENCH门电源MOSFET
-
申请号： US12066984申请日： 2005-09-21
-
公开(公告)号： US20090250750A1公开(公告)日： 2009-10-08
- 发明人: Toshiyuki Takemori , Yuji Watanabe , Fuminori Sasaoka , Kazushige Matsuyama , Kunihito Oshima , Masato Itoi
- 申请人： Toshiyuki Takemori , Yuji Watanabe , Fuminori Sasaoka , Kazushige Matsuyama , Kunihito Oshima , Masato Itoi
- 申请人地址： JP Tokyo
- 专利权人： SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- 当前专利权人： SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- 当前专利权人地址： JP Tokyo
- 国际申请： PCT/JP2005/017417 WO 20050921
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A trench gate power MOSFET (1) of the present invention includes an n-type epitaxial layer (12), gates (18) and MOSFET cells. The gate (18) is disposed in a trench (14) formed in a surface of the n-type epitaxial layer (12). The MOSFET cell is formed on the surface of the n-type epitaxial layer (12) so as to be in contact with side surfaces of the trench (14). The trench gate power MOSFET (1) further includes a p-type isolation region (26) formed on the surface of the n-type epitaxial layer (12) and disposed between the MOSFET cells adjacent to each other in the extending direction of the trench (14) out of the MOSFET cells, and has a pn-junction diode formed between the p-type isolation region (26) and the n-type epitaxial layer (12). According to the trench gate power MOSFET (1) of the present invention, the increase of a diode leakage current with the elevation of temperature can be suppressed.
信息查询
IPC分类:
