发明申请
US20090250760A1 METHODS OF FORMING HIGH-K/METAL GATES FOR NFETS AND PFETS
审中-公开
形成用于NFET和PFET的高K /金属栅的方法
- 专利标题: METHODS OF FORMING HIGH-K/METAL GATES FOR NFETS AND PFETS
- 专利标题(中): 形成用于NFET和PFET的高K /金属栅的方法
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申请号: US12061081申请日: 2008-04-02
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公开(公告)号: US20090250760A1公开(公告)日: 2009-10-08
- 发明人: Michael P. Chudzik , William K. Henson , Naim Moumen , Dae-Gyu Park , Hongwen Yan
- 申请人: Michael P. Chudzik , William K. Henson , Naim Moumen , Dae-Gyu Park , Hongwen Yan
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L27/088
- IPC分类号: H01L27/088 ; H01L21/4763
摘要:
Methods of forming high-k/metal gates for an NFET and PFET and a related structure are disclosed. One method includes recessing a PFET region; forming a first high-k dielectric layer and a first metal layer over the substrate; removing the first high-k dielectric layer and the first metal over the NFET region using a mask; forming a forming a second high-k dielectric layer and a second metal layer over the substrate, the first high-k dielectric layer being different then the second high-k dielectric layer and the first metal being different than the second metal; removing the second high-k dielectric layer and the second metal over the PFET region using a mask; depositing a polysilicon over the substrate; and forming a gate over the NFET region and the PFET region by simultaneously etching the polysilicon, the first high-k dielectric layer, the first metal, the second high-k dielectric layer and the second metal.