发明申请
- 专利标题: FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURE
- 专利标题(中): 场效应晶体管及其制造方法
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申请号: US12099175申请日: 2008-04-08
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公开(公告)号: US20090250772A1公开(公告)日: 2009-10-08
- 发明人: Alan B. Botula , Alvin J. Joseph , Stephen E. Luce , John J. Pekarik , Yun Shi
- 申请人: Alan B. Botula , Alvin J. Joseph , Stephen E. Luce , John J. Pekarik , Yun Shi
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
A semiconductor structure and method of manufacture and, more particularly, a field effect transistor that has a body contact and method of manufacturing the same is provided. The structure includes a device having a raised source region of a first conductivity type and an active region below the raised source region extending to a body of the device. The active region has a second conductivity type different than the first conductivity type. A contact region is in electric contact with the active region. The method includes forming a raised source region over an active region of a device and forming a contact region of a same conductivity type as the active region, wherein the active region forms a contact body between the contact region and a body of the device.
公开/授权文献
- US08921190B2 Field effect transistor and method of manufacture 公开/授权日:2014-12-30