发明申请
- 专利标题: Method of manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US12379827申请日: 2009-03-03
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公开(公告)号: US20090253249A1公开(公告)日: 2009-10-08
- 发明人: Satoshi Taniguchi , Nobuhiro Suzuki , Hideki Ono
- 申请人: Satoshi Taniguchi , Nobuhiro Suzuki , Hideki Ono
- 申请人地址: JP Tokyo
- 专利权人: SONY CORPORATION
- 当前专利权人: SONY CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2008-099242 20080407
- 主分类号: H01L21/20
- IPC分类号: H01L21/20
摘要:
There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer.
公开/授权文献
- US08148238B2 Method of manufacturing semiconductor device 公开/授权日:2012-04-03
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