发明申请
US20090256237A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DATA PROCESSING SYSTEM
审中-公开
半导体器件及其制造方法和数据处理系统
- 专利标题： SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DATA PROCESSING SYSTEM
- 专利标题（中）： 半导体器件及其制造方法和数据处理系统
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申请号： US12420307申请日： 2009-04-08
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公开(公告)号： US20090256237A1公开(公告)日： 2009-10-15
- 发明人: Hirotaka KOBAYASHI
- 申请人： Hirotaka KOBAYASHI
- 申请人地址： JP Tokyo
- 专利权人： ELPIDA MEMORY, INC.
- 当前专利权人： ELPIDA MEMORY, INC.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-103284 20080411
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; H01L27/108 ; H01L21/768
摘要：
A miniaturized semiconductor device is provided by reducing the design thickness of a wiring line protecting film covering the surface of a wiring layer, and reducing the distance between the wiring layer and via plugs formed by a self-aligning process. Dummy mask layers extending in the same layout pattern as the wiring layer is formed above the wiring layer covered with a protecting film composed of a cap layer and side wall layers. In the self-aligning process for forming via plugs in a self-aligned manner with the wiring layer and its protecting film, the thickness of the cap layer is reduced and the design interval between the via plugs is reduced, whereby the miniaturization of the semiconductor device is achieved.