Invention Application
US20090261389A1 COMPOSITION FOR OXIDE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR USING THE COMPOSITION, AND METHOD OF FABRICATING THE TRANSISTOR
有权
氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管以及制造晶体管的方法
- Patent Title: COMPOSITION FOR OXIDE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR USING THE COMPOSITION, AND METHOD OF FABRICATING THE TRANSISTOR
- Patent Title (中): 氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管以及制造晶体管的方法
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Application No.: US12331688Application Date: 2008-12-10
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Publication No.: US20090261389A1Publication Date: 2009-10-22
- Inventor: Doo Hee Cho , Shin Hyuk Yang , Chun Won Byun , Chi Sun Hwang , Hye Yong Chu , Kyoung Ik Cho
- Applicant: Doo Hee Cho , Shin Hyuk Yang , Chun Won Byun , Chi Sun Hwang , Hye Yong Chu , Kyoung Ik Cho
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Priority: KR10-2008-0035132 20080416; KR10-2008-0058878 20080623
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8232 ; H01B1/02
Abstract:
A composition for an oxide semiconductor thin film, a field effect transistor (FET) using the composition, and a method of fabricating the FET are provided. The composition includes an aluminum oxide, a zinc oxide, and a tin oxide. The thin film formed of the composition remains in amorphous phase at a temperature of 400° C or less. The FET using an active layer formed of the composition has improved electrical characteristics and can be fabricated using a low-temperature process without expensive raw materials, such as In and Ga.
Public/Granted literature
- US08017045B2 Composition for oxide semiconductor thin film and field effect transistor using the composition Public/Granted day:2011-09-13
Information query
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