- 专利标题： GaN single crystal substrate and method of making the same
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申请号： US12382180申请日： 2009-03-10
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公开(公告)号： US20090263955A1公开(公告)日： 2009-10-22
- 发明人: Kensaku Motoki , Takuji Okahisa , Naoki Matsumoto
- 申请人： Kensaku Motoki , Takuji Okahisa , Naoki Matsumoto
- 申请人地址： JP Osaka
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： JP Osaka
- 优先权： JP1997-298300 19971030; JP1998-009008 19980120; JP1998-102546 19980414
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/304
摘要：
The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing step of growing on the mask layer 8 an epitaxial layer 12 made of GaN.
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