发明申请
US20090267145A1 MOSFET DEVICE HAVING DUAL INTERLEVEL DIELECTRIC THICKNESS AND METHOD OF MAKING SAME
审中-公开
具有双重交互电导厚度的MOSFET器件及其制造方法
- 专利标题： MOSFET DEVICE HAVING DUAL INTERLEVEL DIELECTRIC THICKNESS AND METHOD OF MAKING SAME
- 专利标题（中）： 具有双重交互电导厚度的MOSFET器件及其制造方法
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申请号： US12108045申请日： 2008-04-23
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公开(公告)号： US20090267145A1公开(公告)日： 2009-10-29
- 发明人: Charles Walter Pearce , Simon J. Molloy , Shuming Xu , Xiao Rui Li
- 申请人： Charles Walter Pearce , Simon J. Molloy , Shuming Xu , Xiao Rui Li
- 申请人地址： US PA Bethlehem
- 专利权人： CICLON SEMICONDUCTOR DEVICE CORP.
- 当前专利权人： CICLON SEMICONDUCTOR DEVICE CORP.
- 当前专利权人地址： US PA Bethlehem
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A method of forming a metal-oxide-semiconductor (MOS) device includes the following steps: forming a semiconductor layer of a first conductivity type having source and drain regions of a second conductivity type, a channel region and a lightly-doped drain region formed therein; forming a gate over the channel region proximate an upper surface of the semiconductor layer; after the forming steps, depositing a first dielectric layer having a first thickness over an upper surface of the semiconductor layer; etching the first dielectric layer in a region over the lightly-doped drain proximate to the gate to reduce its thickness; conformably depositing a second dielectric layer having a second thickness over the first dielectric layer, including in the etched region, the second thickness being less than the first thickness; and forming a shielding electrode over the second dielectric layer.
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