发明申请
- 专利标题: METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE
- 专利标题(中): 制造发光装置的方法
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申请号: US12429314申请日: 2009-04-24
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公开(公告)号: US20090269485A1公开(公告)日: 2009-10-29
- 发明人: Hisao IKEDA , Takahiro IBE
- 申请人: Hisao IKEDA , Takahiro IBE
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 优先权: JP2008-114975 20080425
- 主分类号: B05D5/06
- IPC分类号: B05D5/06
摘要:
By irradiating a first substrate which is an evaporation donor substrate including a function layer in which films having different refractive indexes (high-refractive index films and low refractive index films) are stacked with first light (wavelength=λ1), a material layer over the first substrate is patterned, and by irradiating the first substrate with second light (wavelength=λ2) which is different from λ1, the material layer which is patterned is evaporated onto a second substrate which is a deposition target substrate.
公开/授权文献
- US08293319B2 Method for manufacturing light-emitting device 公开/授权日:2012-10-23
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