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发明申请
US20090269903A1 METHODS FOR FABRICATING ACTIVE DEVICES ON A SEMICONDUCTOR-ON-INSULATOR SUBSTRATE UTILIZING MULTIPLE DEPTH SHALLOW TRENCH ISOLATIONS 失效
在使用多个深度深层分离分离的半导体绝缘体基板上制作活性器件的方法

METHODS FOR FABRICATING ACTIVE DEVICES ON A SEMICONDUCTOR-ON-INSULATOR SUBSTRATE UTILIZING MULTIPLE DEPTH SHALLOW TRENCH ISOLATIONS
摘要：
Methods for fabricating a device structure in a semiconductor-on-insulator substrate. The method includes forming a first isolation region in the substrate device layer that extends from a top surface of the device layer to a first depth and forming a second isolation region in the semiconductor layer that extends from the top surface of the semiconductor layer to a second depth greater than the first depth. The method further includes forming a doped region of the device structure in the semiconductor layer that is located vertically between the first isolation region and the insulating layer.
摘要（中）：

在绝缘体上半导体衬底中制造器件结构的方法。 该方法包括在衬底器件层中形成第一隔离区，该第一隔离区从器件层的顶表面延伸到第一深度，并且在半导体层中形成第二隔离区，该半导体层从半导体层的顶表面延伸到第二隔离区 深度大于第一深度。 该方法还包括在垂直位于第一隔离区域和绝缘层之间的半导体层中形成器件结构的掺杂区域。

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