发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US12408415申请日： 2009-03-20
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公开(公告)号： US20090273031A1公开(公告)日： 2009-11-05
- 发明人: Wataru SAITO , Syotaro ONO , Nana HATANO , Masakatsu TAKASHITA , Hiroshi OHTA , Miho WATANABE
- 申请人： Wataru SAITO , Syotaro ONO , Nana HATANO , Masakatsu TAKASHITA , Hiroshi OHTA , Miho WATANABE
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008120309 20080502
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type provided on a major surface of the first semiconductor layer; a third semiconductor layer of a second conductivity type provided on the major surface of the first semiconductor layer, the third semiconductor layer forming a structure of periodical arrangement with the second semiconductor layer; a fourth semiconductor layer of the second conductivity type provided above the third semiconductor layer; a fifth semiconductor layer of the first conductivity type selectively provided on a surface of the fourth semiconductor layer; a first main electrode electrically connected to the first semiconductor layer; a second main electrode provided to contact a surface of the fifth semiconductor layer and a surface of the fourth semiconductor layer; and a control electrode provided above the fifth semiconductor layer, the fourth semiconductor layer, and the second semiconductor layer via an insulative film. A portion is provided locally in the third semiconductor layer, the portion depleting at a voltage not more than one third of a voltage at which the second semiconductor layer and the third semiconductor layer completely deplete.