发明申请
US20090273820A1 PLASMOSTOR: A-METAL-OXIDE-SI FIELD EFFECT PLASMONIC MODULATOR
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PLASMOSTOR:A-METAL-OXIDE-SI FIELD EFFECT PLASMONIC MODULATOR
- 专利标题: PLASMOSTOR: A-METAL-OXIDE-SI FIELD EFFECT PLASMONIC MODULATOR
- 专利标题(中): PLASMOSTOR:A-METAL-OXIDE-SI FIELD EFFECT PLASMONIC MODULATOR
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申请号: US12410419申请日: 2009-03-24
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公开(公告)号: US20090273820A1公开(公告)日: 2009-11-05
- 发明人: Jennifer A. Dionne , Kenneth A. Diest , Luke Sweatlock , Harry A. Atwater
- 申请人: Jennifer A. Dionne , Kenneth A. Diest , Luke Sweatlock , Harry A. Atwater
- 主分类号: G06E3/00
- IPC分类号: G06E3/00 ; G02F1/00
摘要:
The invention is a system and method for performing all-optical modulation. A semiconductor layer having a defined thickness has an insulator adjacent one surface of the semiconductor. Conductive layers are provided adjacent the semiconductor layer and the insulator. A photodetector is provided to generate an electric field across the conductive layers in response to an input optical gate signal. An input optical signal is modulated by interaction with a plasmon wave generated at the semiconductor/conductive layer interface. By defining the thickness of the semiconductor layer, a desired wavelength of light supports the plasmon waves. Operation of the all-optical modulator requires the provision of an input optical signal of a desired wavelength and the provision of a gate optical signal. An output optical signal is recovered and can be used to store, display or transmit information, for example over a fiber optic communication system, such as a telecommunication system.
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