发明申请
- 专利标题: FILM FORMATION APPARATUS AND METHOD FOR SEMICONDUCTOR PROCESS
- 专利标题(中): 薄膜形成装置和半导体工艺方法
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申请号: US12504454申请日: 2009-07-16
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公开(公告)号: US20090275150A1公开(公告)日: 2009-11-05
- 发明人: Kazuhide Hasebe , Pao-Hwa Chou , Chaeho Kim
- 申请人: Kazuhide Hasebe , Pao-Hwa Chou , Chaeho Kim
- 优先权: JP2004-182361 20040621; JP2005-141401 20050513
- 主分类号: H01L21/66
- IPC分类号: H01L21/66
摘要:
A film formation apparatus for a semiconductor process includes a source gas supply circuit to supply into a process container a source gas for depositing a thin film on target substrates, and a mixture gas supply circuit to supply into the process container a mixture gas containing a doping gas for doping the thin film with an impurity and a dilution gas for diluting the doping gas. The mixture gas supply circuit includes a gas mixture tank disposed outside the process container to mix the doping gas with the dilution gas to form the mixture gas, a mixture gas supply line to supply the mixture gas from the gas mixture tank into the process container, a doping gas supply circuit to supply the doping gas into the gas mixture tank, and a dilution gas supply circuit to supply the dilution gas into the gas mixture tank.