发明申请
- 专利标题： Light emitting device and fabrication method therefor
- 专利标题（中）： 发光元件及其制造方法
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申请号： US12291396申请日： 2008-11-07
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公开(公告)号： US20090278165A1公开(公告)日： 2009-11-12
- 发明人: Chun-Yen Chang , Tsung Hsi Yang
- 申请人： Chun-Yen Chang , Tsung Hsi Yang
- 专利权人： National Chiao Tung University
- 当前专利权人： National Chiao Tung University
- 优先权： TW97117321 20080509
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L21/00
摘要：
A light emitting device (LED) structure formed on a Group IV-based semiconductor substrate is provided. The LED structure includes a Group IV-based substrate, an AlN nucleation layer formed on the Group IV-based substrate, a GaN epitaxial layer formed on the AlN nucleation layer, a distributed Bragg reflector (DBR) multi-layer structure formed on the epitaxial layer, and an LED active layer formed on the DBR multi-layer structure.
公开/授权文献
- US07977687B2 Light emitter device 公开/授权日：2011-07-12
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