发明申请
- 专利标题: Deep source electrode MOSFET
- 专利标题(中): 深源电极MOSFET
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申请号: US12460434申请日: 2009-07-16
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公开(公告)号: US20090278198A1公开(公告)日: 2009-11-12
- 发明人: Jianjun Cao , Timothy Henson
- 申请人: Jianjun Cao , Timothy Henson
- 专利权人: International Rectifier Corporation
- 当前专利权人: International Rectifier Corporation
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
摘要:
A power semiconductor device that includes a plurality of source trenches that extend to a depth below the gate electrodes and a termination region that includes a termination trench that is as deep as the source trenches.