发明申请
US20090279349A1 PHASE CHANGE DEVICE HAVING TWO OR MORE SUBSTANTIAL AMORPHOUS REGIONS IN HIGH RESISTANCE STATE
有权
在高电压状态下有两个或更多的大面积非晶区域的相变装置
- 专利标题： PHASE CHANGE DEVICE HAVING TWO OR MORE SUBSTANTIAL AMORPHOUS REGIONS IN HIGH RESISTANCE STATE
- 专利标题（中）： 在高电压状态下有两个或更多的大面积非晶区域的相变装置
-
申请号： US12117164申请日： 2008-05-08
-
公开(公告)号： US20090279349A1公开(公告)日： 2009-11-12
- 发明人: Yen-Hao Shih , Chieh Fang Chen , Hsiang-Lan Lung
- 申请人： Yen-Hao Shih , Chieh Fang Chen , Hsiang-Lan Lung
- 申请人地址： TW Hsinchu
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
Memory devices are described herein along with method for operating the memory device. A memory cell as described herein includes a first electrode and a second electrode. The memory cell also comprises phase change material having first and second active regions arranged in series along an inter-electrode current path between the first and second electrode.
公开/授权文献
信息查询
