A method of forming a pattern including: forming an underlayer film on a support using an underlayer film-forming material, forming a hard mask on the underlayer film using a silicon-based hard mask-forming material, forming a first resist film by applying a chemically amplified positive resist composition to the hard mask, forming a first resist pattern by selectively exposing the first resist film through a first mask pattern and then performing developing, forming a first pattern by etching the hard mask using the first resist pattern as a mask, forming a second resist film by applying a chemically amplified positive silicon-based resist composition to the first pattern and the underlayer film, forming a second resist pattern by selectively exposing the second resist film through a second mask pattern and then performing developing, and forming a second pattern by etching the underlayer film using the first pattern and the second resist pattern as a mask.