发明申请
- 专利标题： METHOD OF FORMING A CONDUCTIVE STRUCTURE IN A SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- 专利标题（中）： 在半导体器件中形成导电结构的方法
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申请号： US12453231申请日： 2009-05-04
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公开(公告)号： US20090280615A1公开(公告)日： 2009-11-12
- 发明人: Dong-Kak LEE , Ki-Hyun HWANG , Jin-Gyun KIM
- 申请人： Dong-Kak LEE , Ki-Hyun HWANG , Jin-Gyun KIM
- 优先权： KR10-2008-0042287 20080507
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/3205 ; H01L21/266
摘要：
A method of forming a conductive structure in a semiconductor device includes forming a conductive layer on a substrate, forming a conductive layer pattern on the substrate by patterning the conductive layer, forming an oxide layer on the substrate and a portion of the conductive layer, and forming a capping layer on the oxide layer and the conductive layer pattern.
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