发明申请
- 专利标题： Reduced Free-Charge Carrier Lifetime Device
- 专利标题（中）： 减少免费载体终身设备
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申请号： US12119751申请日： 2008-05-13
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公开(公告)号： US20090283799A1公开(公告)日： 2009-11-19
- 发明人: Holger Ruething , Hans-Joachim Schulze , Frank Hille , Frank Pfirsch
- 申请人： Holger Ruething , Hans-Joachim Schulze , Frank Hille , Frank Pfirsch
- 申请人地址： DE Neubiberg
- 专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人地址： DE Neubiberg
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L21/331
摘要：
According to one embodiment, a semiconductor device comprises a body of a first conductivity type having a source region and a channel, the body being in contact with a top contact layer. The device also comprises a gate arranged adjacent the channel and a drift zone of a second conductivity type arranged between the body and a bottom contact layer. An integrated diode is formed partially by a first zone of the first conductivity type within the body and being in contact with the top contact layer and a second zone of the second conductivity type being in contact with the bottom contact layer. A reduced charge carrier concentration region is formed in the drift zone having a continuously increasing charge carrier lifetime in the vertical direction so that the charge carrier lifetime is lowest near the body and highest near the bottom contact layer.
公开/授权文献
- US07932583B2 Reduced free-charge carrier lifetime device 公开/授权日：2011-04-26
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