发明申请
- 专利标题： Flash Memory Device and Method of Fabricating the Same
- 专利标题（中）： 闪存设备及其制造方法
-
申请号： US12464947申请日： 2009-05-13
-
公开(公告)号： US20090283818A1公开(公告)日： 2009-11-19
- 发明人: Whee Won Cho , Nam Woo So , Cheol Mo Jeong , Jung Geun Kim , Eun Gyeong Jang
- 申请人： Whee Won Cho , Nam Woo So , Cheol Mo Jeong , Jung Geun Kim , Eun Gyeong Jang
- 申请人地址： KR Icheon-si
- 专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人地址： KR Icheon-si
- 优先权： KR2008-0044117 20080513; KR2009-0006800 20090129
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L21/336
摘要：
A flash memory device includes an isolation layer formed on an isolation region of a semiconductor substrate, a tunnel insulating layer formed on an active region of the semiconductor substrate, a first conductive layer formed over the tunnel insulating layer, a dielectric layer formed on the first conductive layer and the isolation layer, the dielectric layer having a groove for exposing the isolation layer, a trench formed on the isolation layer and exposed through the groove, and a second conductive layer formed over the dielectric layer the trench.
公开/授权文献
- US08138077B2 Flash memory device and method of fabricating the same 公开/授权日：2012-03-20
信息查询
IPC分类:
