发明申请
US20090283912A1 DAMASCENE WIRING FABRICATION METHODS INCORPORATING DIELECTRIC CAP ETCH PROCESS WITH HARD MASK RETENTION
审中-公开
具有硬掩模保持性的电介质蚀刻工艺的大型接线制造方法
- 专利标题： DAMASCENE WIRING FABRICATION METHODS INCORPORATING DIELECTRIC CAP ETCH PROCESS WITH HARD MASK RETENTION
- 专利标题（中）： 具有硬掩模保持性的电介质蚀刻工艺的大型接线制造方法
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申请号： US12243440申请日： 2008-10-01
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公开(公告)号： US20090283912A1公开(公告)日： 2009-11-19
- 发明人: Hakeem B.S. AKINMADE-YUSUFF , Kaushik A. Kumar , Anthony D. Lisi
- 申请人： Hakeem B.S. AKINMADE-YUSUFF , Kaushik A. Kumar , Anthony D. Lisi
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
Methods for fabricating metal wiring layers of a semiconductor device are provided where damascene interconnect structures are formed in a BEOL process that incorporates a dielectric cap-open-first process to achieve hard mask retention and to control the gouging of a buffer oxide layer to prevent exposure of underlying features protected by the buffer oxide layer.
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