发明申请
US20090286375A1 METHOD OF FORMING SIDEWALL SPACERS TO REDUCE FORMATION OF RECESSES IN THE SUBSTRATE AND INCREASE DOPANT RETENTION IN A SEMICONDUCTOR DEVICE
有权
形成侧壁间隔的方法，以减少在基底中形成的凹陷并增加半导体器件中的氘保持
- 专利标题： METHOD OF FORMING SIDEWALL SPACERS TO REDUCE FORMATION OF RECESSES IN THE SUBSTRATE AND INCREASE DOPANT RETENTION IN A SEMICONDUCTOR DEVICE
- 专利标题（中）： 形成侧壁间隔的方法，以减少在基底中形成的凹陷并增加半导体器件中的氘保持
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申请号： US12122885申请日： 2008-05-19
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公开(公告)号： US20090286375A1公开(公告)日： 2009-11-19
- 发明人: Mahalingam Nandakumar , Said Ghneim , Frank Scott Johnson
- 申请人： Mahalingam Nandakumar , Said Ghneim , Frank Scott Johnson
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method of forming sidewall spacers for a gate in a semiconductor device includes re-oxidizing/annealing silicon of the substrate and silicon of the gate after formation of the gate. The substrate is re-oxidized by performing an anneal in an inert atmosphere or ambient. The substrate may be re-oxidized/annealing after depositing an oxide layer covering the substrate and gate. Additionally, the substrate may be re-oxidized/annealing after forming the gate without depositing the oxide layer.
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