发明申请
US20090289283A1 Wafer For Backside Illumination Type Solid Imaging Device, Production Method Thereof And Backside Illumination Solid Imaging Device
审中-公开
背面照明型晶片固体成像装置及其制造方法及背面照明固体成像装置
- 专利标题： Wafer For Backside Illumination Type Solid Imaging Device, Production Method Thereof And Backside Illumination Solid Imaging Device
- 专利标题（中）： 背面照明型晶片固体成像装置及其制造方法及背面照明固体成像装置
-
申请号： US12469505申请日： 2009-05-20
-
公开(公告)号： US20090289283A1公开(公告)日： 2009-11-26
- 发明人: Kazunari Kurita , Shuichi Omote
- 申请人： Kazunari Kurita , Shuichi Omote
- 申请人地址： JP Tokyo
- 专利权人： Sumco Corporation
- 当前专利权人： Sumco Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-131699 20080520
- 主分类号： H01L31/0392
- IPC分类号： H01L31/0392 ; H01L31/18 ; H01L21/30
摘要：
A wafer for backside illumination type solid imaging device has a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor at its front surface side and a light receiving surface at its back surface side, wherein said wafer is a SOI wafer obtained by forming a given active layer on a support substrate made of C-containing p-type semiconductor material through an insulating layer.