发明申请
US20090294028A1 PROCESS FOR FABRICATING HIGH DENSITY STORAGE DEVICE WITH HIGH-TEMPERATURE MEDIA
审中-公开
用高温介质制造高密度存储器件的方法
- 专利标题： PROCESS FOR FABRICATING HIGH DENSITY STORAGE DEVICE WITH HIGH-TEMPERATURE MEDIA
- 专利标题（中）： 用高温介质制造高密度存储器件的方法
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申请号： US12132139申请日： 2008-06-03
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公开(公告)号： US20090294028A1公开(公告)日： 2009-12-03
- 发明人: John Heck , Nickolai Belov , Zebulah Nathan Rapp , Terry Zhu
- 申请人： John Heck , Nickolai Belov , Zebulah Nathan Rapp , Terry Zhu
- 申请人地址： US CA Fremont
- 专利权人： NANOCHIP, INC.
- 当前专利权人： NANOCHIP, INC.
- 当前专利权人地址： US CA Fremont
- 主分类号： B32B38/10
- IPC分类号： B32B38/10 ; B32B38/00 ; B32B37/00
摘要：
A method of fabricating an information storage device comprises providing a media substrate including a first side and a second side, forming a media on the first side of the media substrate, adhesively associating the media with a carrier substrate, thinning a surface of the second side of the media substrate while supporting and protecting the media with the carrier substrate, and forming circuitry on the thinned second side of the media substrate.
信息查询
