发明申请
US20090294062A1 PLASMA REACTOR WITH PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF A SOURCE POWER OR BIAS POWER RF GENERATOR
有权
具有等离子体负载阻抗的等离子体反应器通过同步电源或偏置功率射频发生器的同步调制进行工程过程
- 专利标题： PLASMA REACTOR WITH PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF A SOURCE POWER OR BIAS POWER RF GENERATOR
- 专利标题（中）： 具有等离子体负载阻抗的等离子体反应器通过同步电源或偏置功率射频发生器的同步调制进行工程过程
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申请号： US12128963申请日： 2008-05-29
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公开(公告)号： US20090294062A1公开(公告)日： 2009-12-03
- 发明人: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
- 申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： C23C16/505
- IPC分类号： C23C16/505 ; C23F1/02
摘要：
In a plasma reactor employing source and bias RF power generators, plasma is stabilized against an engineered transient in the output of either the source or bias power generator by a compensating modulation in the other generator.
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