发明申请
US20090294853A1 THIN FILM TRANSISTOR HAVING A COMMON CHANNEL AND SELECTABLE DOPING CONFIGURATION
审中-公开
具有通用通道和可选择的配置的薄膜晶体管
- 专利标题： THIN FILM TRANSISTOR HAVING A COMMON CHANNEL AND SELECTABLE DOPING CONFIGURATION
- 专利标题（中）： 具有通用通道和可选择的配置的薄膜晶体管
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申请号： US12474731申请日： 2009-05-29
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公开(公告)号： US20090294853A1公开(公告)日： 2009-12-03
- 发明人: Germain L. Fenger , Karl D. Hirschman , Robert Manley , Carlo Anthony Kosik Williams
- 申请人： Germain L. Fenger , Karl D. Hirschman , Robert Manley , Carlo Anthony Kosik Williams
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/336
摘要：
Methods and apparatus for producing a thin film transistor (TFT) result in: a semiconductor layer; a channel region formed on or in the semiconductor layer and having first and second opposing ends, and having third and fourth opposing ends transverse to the first and second ends; an n-type source structure disposed on or in the semiconductor layer adjacent to the first end of the channel; an n-type drain structure disposed on or in the semiconductor layer adjacent to the second end of the channel; a p-type source structure disposed on or in the semiconductor layer adjacent to the third end of the channel; a p-type drain structure disposed on or in the semiconductor layer adjacent to the fourth end of the channel; and a gate structure disposed over the channel region.
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