发明申请
US20090294922A1 ORGANIC SILICON OXIDE FINE PARTICLE AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE
审中-公开
有机硅氧化物微粒及其制备方法,多孔膜成膜组合物,多孔膜及其形成方法及半导体器件
- 专利标题: ORGANIC SILICON OXIDE FINE PARTICLE AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE
- 专利标题(中): 有机硅氧化物微粒及其制备方法,多孔膜成膜组合物,多孔膜及其形成方法及半导体器件
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申请号: US12472645申请日: 2009-05-27
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公开(公告)号: US20090294922A1公开(公告)日: 2009-12-03
- 发明人: Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
- 申请人: Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
- 优先权: JP2008-142343 20080530
- 主分类号: H01L23/58
- IPC分类号: H01L23/58 ; H01L21/47 ; C07F7/08 ; B32B9/00
摘要:
Provided is an organic silicon oxide fine particle capable of satisfying an expected dielectric constant and mechanical strength and having excellent chemical stability for obtaining a high-performance porous insulating film. More specifically, provided is an organic silicon oxide fine particle comprising a core comprising an inorganic silicon oxide or a first organic silicon oxide containing an organic group having a carbon atom directly attached to a silicon atom and, and a shell on or above an outer circumference of the core, the shell comprising a second organic silicon oxide different from the first organic silicon oxide which the second organic silicon has been formed by hydrolysis and condensation, in the presence of a basic catalyst, of a shell-forming component comprising an organic-group-containing hydrolyzable silane containing an organic group having a carbon atom directly attached to a silicon atom or a mixture of the organic-group-containing hydrolyzable silane and an organic-group-free hydrolyzable silane not having the organic group, wherein a ratio [C]/[Si] is 0 or greater but less than 1 in the core and 1 or greater 1 in the shell wherein [C] represents the number of all the carbon atoms and [Si] represents the number of all the silicon atoms.
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