A method for fabricating an interconnect structure for interconnecting a semiconductor substrate to have three distinct patterned structures such that the interconnect structure provides both a low k and high structural integrity. The method includes depositing an interlayer dielectric onto the semiconductor substrate, forming a first pattern within the interlayer dielectric material by a first lithographic process that results in both via features and ternary features being formed in the interconnect structure. The method further includes forming a second pattern within the interlayer dielectric material by a second lithographic process to form line features within the interconnect structure. Hence the method forms the three separate distinct patterned structures using only two lithographic processes for each interconnect level.