发明申请
- 专利标题: SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件
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申请号: US12385839申请日: 2009-04-21
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公开(公告)号: US20090295463A1公开(公告)日: 2009-12-03
- 发明人: Tetsuya Katou
- 申请人: Tetsuya Katou
- 申请人地址: JP Kawasaki
- 专利权人: NEC ELECTRONICS CORPORATION
- 当前专利权人: NEC ELECTRONICS CORPORATION
- 当前专利权人地址: JP Kawasaki
- 优先权: JP2008-137844 20080527
- 主分类号: H03K3/01
- IPC分类号: H03K3/01
摘要:
A semiconductor device includes a semiconductor substrate, a first lower-layer line for supplying power to a transistor formed on the semiconductor substrate, a first interlayer line which is connected to the first lower-layer line, and an allowable current of which is larger than that of the first lower-layer line; and an upper-layer line which is provided above the first interlayer line and receives power input from outside. The first interlayer line is connected to the upper-layer line through a switch circuit formed on the semiconductor substrate.
公开/授权文献
- US08445987B2 Semiconductor device having a lower-layer line 公开/授权日:2013-05-21
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