发明申请
- 专利标题: DESIGN METHOD OF PLASMONIC CRYSTAL
- 专利标题(中): PLASMONIC CRYSTAL的设计方法
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申请号: US12538936申请日: 2009-08-11
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公开(公告)号: US20090297693A1公开(公告)日: 2009-12-03
- 发明人: Tomoko Katsuhara , Yuuki Watanabe , Hajime Matsumura
- 申请人: Tomoko Katsuhara , Yuuki Watanabe , Hajime Matsumura
- 申请人地址: JP Tokyo
- 专利权人: SONY CORPORATION
- 当前专利权人: SONY CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2007-121439 20070502; JP2008-206841 20080811
- 主分类号: B05D5/06
- IPC分类号: B05D5/06
摘要:
A method of designing a plasmonic crystal is provided. The method includes: determining an arrangement period of a plasmonic crystal formed on a metal surface at an interface between a dielectric and the metal in accordance with a dispersion relation of a surface plasmon polariton at the interface and a Bragg reflection condition of the surface plasmon polariton.
公开/授权文献
- US08372476B2 Method of plasmonic crystal 公开/授权日:2013-02-12