发明申请
- 专利标题： Sb-Te Base Alloy Sinter Sputtering Target
- 专利标题（中）： Sb-Te基合金烧结靶
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申请号： US12444859申请日： 2007-10-05
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公开(公告)号： US20090301872A1公开(公告)日： 2009-12-10
- 发明人: Masataka Yahagi , Hideyuki Takahashi , Hirohisa Ajima
- 申请人： Masataka Yahagi , Hideyuki Takahashi , Hirohisa Ajima
- 申请人地址： JP Tokyo
- 专利权人： NIPPON MINING & METALS CO., LTD.
- 当前专利权人： NIPPON MINING & METALS CO., LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2006-279416 20061013
- 国际申请： PCT/JP2007/069550 WO 20071005
- 主分类号： C23C14/14
- IPC分类号： C23C14/14 ; C22C28/00 ; G11B7/26
摘要：
Provided is an Sb—Te base alloy sinter sputtering target having Sb and Te as its primary component and comprising a structure in which Sb—Te base alloy particles are surrounded by fine carbon or boron particles; wherein, if the mean diameter of the Sb—Te base alloy particles is X and the particle size of carbon or boron is Y, Y/X is within the range of 1/10 to 1/10000. The present invention seeks to improve the Sb—Te base alloy sputtering target structure, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing during the sputtering process.
公开/授权文献
- US08882975B2 Sb-Te base alloy sinter sputtering target 公开/授权日：2014-11-11
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