发明申请
- 专利标题: SYNTHESIZING PRECURSOR SOLUTION ENABLING FABRICATING BIAXIALLY TEXTURED BUFFER LAYERS BY LOW TEMPERATURE ANNEALING
- 专利标题(中): 合成前驱体解决方案,通过低温退火制作双色纹理缓冲层
-
申请号: US12312880申请日: 2007-01-12
-
公开(公告)号: US20090302282A1公开(公告)日: 2009-12-10
- 发明人: Jai-Moo Yoo , Young-Kuk Kim , Jae-Woong Ko , Kook-Chae Chung
- 申请人: Jai-Moo Yoo , Young-Kuk Kim , Jae-Woong Ko , Kook-Chae Chung
- 国际申请: PCT/KR2007/000231 WO 20070112
- 主分类号: H01B1/20
- IPC分类号: H01B1/20
摘要:
Disclosed herein is a precursor solution for forming a biaxially oriented buffer layer through low-temperature heat treatment, by which a highly oriented buffer layer can be formed even when the precursor solution is heat-treated at a low temperature of 1000° C. or lower at the time of forming a buffer layer through a wet chemical method. The precursor solution is prepared by adding a carboxylate or an alkoxide of bismuth, boron, lead, gallium, or the like, which is a metal salt for forming an oxide having a low melting point of 1200° C. or lower after pyrolysis in an oxygen atmosphere, to a precursor solution for forming a buffer layer through a wet chemical method.
公开/授权文献
信息查询