发明申请
- 专利标题： Resistive random access memory
- 专利标题（中）： 电阻随机存取存储器
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申请号： US12379719申请日： 2009-02-27
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公开(公告)号： US20090302315A1公开(公告)日： 2009-12-10
- 发明人: Changbum Lee , Youngsoo Park , Myoungjae Lee , Bosoo Kang , Seungeon Ahn , Kihwan Kim
- 申请人： Changbum Lee , Youngsoo Park , Myoungjae Lee , Bosoo Kang , Seungeon Ahn , Kihwan Kim
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2008-0052666 20080604
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L29/00
摘要：
A resistive random access memory (RRAM) includes a switch region formed of a material having bi-polar properties; and a memory resistor formed of a material having uni-polar properties. The RRAM further includes a lower electrode formed below the switch region; an upper electrode formed on the memory resistor; and an intermediate electrode formed between the switch region and the memory resistor.
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