发明申请
US20090309105A1 Methods for producing improved crystallinity group III-nitride crystals from initial group III-Nitride seed by ammonothermal Growth 有权
通过氨热生长从III-III族氮化物种子生产改性结晶III族氮化物晶体的方法

  • 专利标题: Methods for producing improved crystallinity group III-nitride crystals from initial group III-Nitride seed by ammonothermal Growth
  • 专利标题(中): 通过氨热生长从III-III族氮化物种子生产改性结晶III族氮化物晶体的方法
  • 申请号: US12455760
    申请日: 2009-06-04
  • 公开(公告)号: US20090309105A1
    公开(公告)日: 2009-12-17
  • 发明人: Edward LettsTadao HashimotoMasanori Ikari
  • 申请人: Edward LettsTadao HashimotoMasanori Ikari
  • 主分类号: H01L29/20
  • IPC分类号: H01L29/20 H01L21/20
Methods for producing improved crystallinity group III-nitride crystals from initial group III-Nitride seed by ammonothermal Growth
摘要:
The present invention discloses methods to create higher quality group III-nitride wafers that then generate improvements in the crystalline properties of ingots produced by ammonothermal growth from an initial defective seed. By obtaining future seeds from carefully chosen regions of an ingot produced on a bowed seed crystal, future ingot crystalline properties can be improved. Specifically, the future seeds are optimized if chosen from an area of relieved stress on a cracked ingot or from a carefully chosen N-polar compressed area. When the seeds are sliced out, miscut of 3-10° helps to improve structural quality of successive growth. Additionally a method is proposed to improve crystal quality by using the ammonothermal method to produce a series of ingots, each using a specifically oriented seed from the previous ingot. When employed, these methods enhance the quality of Group III nitride wafers and thus improve the efficiency of any subsequent device.
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