The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a method of manufacturing the same. The gallium nitride based compound semiconductor light-emitting device includes: a substrate 11; an n-type semiconductor layer 13, a light-emitting layer 14, and a p-type semiconductor layer 15 that are composed of gallium nitride based compound semiconductors and formed on the substrate 11 in this order; a transparent positive electrode 16 that is formed on the p-type semiconductor layer 15; a positive electrode bonding pad 17 that is formed on the transparent positive electrode 16; a negative electrode bonding pad 18 that is formed on the n-type semiconductor layer 13; and an uneven surface that has random convex portions formed thereon and is provided on at least a portion of the surface 16a of the transparent positive electrode 16.