发明申请
- 专利标题： CMOS Image sensor having a crosstalk prevention structure
- 专利标题（中）： CMOS图像传感器具有串扰防止结构
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申请号： US12482960申请日： 2009-06-11
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公开(公告)号： US20090309144A1公开(公告)日： 2009-12-17
- 发明人: Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Keang
- 申请人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Keang
- 优先权： KR2008-55187 20080612
- 主分类号： H01L31/112
- IPC分类号： H01L31/112
摘要：
In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P+ type well layer is formed in the P type epitaxial layer. An N type deep guardring well is formed in a photodiode guardring region. The N type deep guardring region makes contact with the N type substrate and also be connected with an operational voltage terminal. A triple well is formed in a photodiode region and a peripheral circuit region. The triple well is used for forming a PMOS and an NMOS having different operational voltages. An isolation region is formed in the photodiode region. The isolation region in the photodiode region has a depth different from a depth of an isolation region in the peripheral circuit region.
公开/授权文献
- US08138530B2 CMOS image sensor having a crosstalk prevention structure 公开/授权日：2012-03-20
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