发明申请
US20090309150A1 Semiconductor Device And Method For Making Semiconductor Device
审中-公开
半导体器件及制造半导体器件的方法
- 专利标题： Semiconductor Device And Method For Making Semiconductor Device
- 专利标题（中）： 半导体器件及制造半导体器件的方法
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申请号： US12138457申请日： 2008-06-13
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公开(公告)号： US20090309150A1公开(公告)日： 2009-12-17
- 发明人: John POWER , Danny Pak-Chum SHUM
- 申请人： John POWER , Danny Pak-Chum SHUM
- 申请人地址： DE Neubiberg
- 专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人地址： DE Neubiberg
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L21/336
摘要：
One or more embodiments relate to a memory device, comprising: a substrate; a gate stack disposed over the substrate, the gate stack comprising a charge storage layer and a high-k dielectric layer; and a cover layer disposed over at least the sidewall surfaces of the high-k dielectric layer.
信息查询
IPC分类:
