发明申请
US20090315062A1 Light Emitting Diode Submount With High Thermal Conductivity For High Power Operation 有权
具有高导热性的发光二极管底座用于大功率操作

  • 专利标题: Light Emitting Diode Submount With High Thermal Conductivity For High Power Operation
  • 专利标题(中): 具有高导热性的发光二极管底座用于大功率操作
  • 申请号: US12145395
    申请日: 2008-06-24
  • 公开(公告)号: US20090315062A1
    公开(公告)日: 2009-12-24
  • 发明人: Wen-Herng SuJunying LuHo-Shang Lee
  • 申请人: Wen-Herng SuJunying LuHo-Shang Lee
  • 主分类号: H01L33/00
  • IPC分类号: H01L33/00
Light Emitting Diode Submount With High Thermal Conductivity For High Power Operation
摘要:
This invention relates to the thermal management, extraction of light, and cost effectiveness of Light Emitting Diode, or LED, electrical circuits. An integrated circuit LED submount is described, for the packaging of high power LEDs. The LED submount provides high thermal conductivity while preserving electrical insulation. In particular, a process is described for anodizing a high thermal conductivity aluminum alloy sheet to form a porous aluminum oxide layer and a non-porous aluminum oxide layer. This anodized aluminum alloy sheet acts as a superior electrical insulator, and also provides surface morphology and mechanical properties that are useful for the fabrication of high-density and high-power multilevel electrical circuits.
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