发明申请
- 专利标题: Multiple-layer non-volatile memory devices, memory systems employing such devices, and methods of fabrication thereof
- 专利标题(中): 多层非易失性存储器件,采用这种器件的存储器系统及其制造方法
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申请号: US12456391申请日: 2009-06-16
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公开(公告)号: US20090315095A1公开(公告)日: 2009-12-24
- 发明人: Jonghyuk Kim , Han-Soo Kim , YoungSeop Rah , Min-sung Song , Jang Young Chul , Soon-Moon Jung , Wonseok Cho
- 申请人: Jonghyuk Kim , Han-Soo Kim , YoungSeop Rah , Min-sung Song , Jang Young Chul , Soon-Moon Jung , Wonseok Cho
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2008-0058511 20080620
- 主分类号: H01L29/788
- IPC分类号: H01L29/788 ; H01L21/336
摘要:
In multiple-layered memory devices, memory systems employing the same, and methods of forming such devices, a second memory device layer on a first memory device layer comprises a second substrate including a second memory cell region. The second substrate includes only a single well in the second memory cell region, the single well of the second memory cell region comprising a semiconducting material doped with impurity of one of a first type and second type. The single well defines an active region in the second memory cell region of the second substrate. Multiple second cell strings are arranged on the second substrate in the second active region. Although the second memory cell region includes only a single well, during a programming or erase operation of the memory cells of the second layer, requiring a high voltage to be applied to the single well in the substrate of the second layer, the high voltage will not interfere with the operation of the peripheral transistors of the first layer, second layer, or other layers, since they are isolated from each other. As a result, the substrate of the second layer can be prepared to have a thinner profile, and with fewer processing steps, resulting in devices with higher-density, greater reliability, and reduced fabrication costs.